参数项参数值
参数项参数值
Vgs th - Gate-Source Threshold Voltage1.8 V
TechnologySi
Id - Continuous Drain Current15 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Rds On - Drain-Source Resistance11.2 mOhms
Width3.9 mm
Height1.75 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge34 nC
Package / CaseSO-8
Mounting StyleSMD/SMT
JPHTS8541290100
Minimum Operating Temperature- 55 C
CAHTS8541290000
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CNHTS8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageInfineon / IR IRF9321TRPBF
TARIC8541290000
Unit Weight0.019048 oz
RoHS Details
Factory Pack Quantity4000
Product TypeMOSFET
Pd - Power Dissipation2.5 W
BrandInfineon / IR
Product CategoryMOSFET
SubcategoryMOSFETs
ManufacturerInfineon
DescriptionMOSFET MOSFT P-Ch -30V -15A 7.2mOhm
Vds - Drain-Source Breakdown Voltage30 V
USHTS8541290095
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)