参数项参数值
参数项参数值
DC Current Gain hFE Max300
ConfigurationSingle
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO40 V
Maximum DC Collector Current1.5 A
KRHTS8541299000
Collector- Emitter Voltage VCEO Max25 V
Continuous Collector Current1.5 A
JPHTS8541290100
CAHTS8541290000
TechnologySi
Transistor PolarityNPN
ImageON Semiconductor / Fairchild SS8050CTA
Emitter- Base Voltage VEBO6 V
DescriptionBipolar Transistors - BJT NPN/25V/1.5A/120-200
Minimum Operating Temperature- 65 C
Height4.7 mm
Length4.7 mm
Collector-Emitter Saturation Voltage0.5 V
PackagingAmmo Pack
Package / CaseTO-92-3 Kinked Lead
DC Collector/Base Gain hfe Min85
Product CategoryBipolar Transistors - BJT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity2000
Width3.93 mm
Mounting StyleThrough Hole
Product TypeBJTs - Bipolar Transistors
BrandON Semiconductor / Fairchild
ManufacturerON Semiconductor
MXHTS85412999
RoHS Details
TARIC8541290000
SeriesSS8050
SubcategoryTransistors
USHTS8541290095
Unit Weight0.008466 oz
CNHTS8541290000
Pd - Power Dissipation1 W
Moisture Sensitivity LevelNot Applicable