参数项参数值
参数项参数值
Forward Transconductance - Min17 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1. 5 V
TechnologySi
Id - Continuous Drain Current10 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Rds On - Drain-Source Resistance20 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time19 ns
MXHTS85412999
Qg - Gate Charge26 nC
Package / CaseSC-70-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 175 C
JPHTS8541290100
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541290000
Fall Time8 ns
PackagingCut Tape
PackagingReel
TARIC8541290000
Pd - Power Dissipation13.6 W
BrandVishay / Siliconix
ImageVishay / Siliconix SQA403EJ-T1_GE3
Product TypeMOSFET
SubcategoryMOSFETs
Factory Pack Quantity3000
Vds - Drain-Source Breakdown Voltage30 V
ManufacturerVishay
Product CategoryMOSFET
Number of Channels1 Channel
USHTS8541290095
Rise Time18 ns
TradenamePowerPAK
DescriptionMOSFET -30V Vds 20V Vgs PowerPAK SC-70
Moisture Sensitivity Level1 (Unlimited)