参数项参数值
参数项参数值
Forward Transconductance - Min19 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Id - Continuous Drain Current74 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time20 ns
Width6.22 mm
Rds On - Drain-Source Resistance20 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time51 ns
Height2.3 mm
Length6.5 mm
MXHTS85412999
KRHTS8541299000
Mounting StyleSMD/SMT
Qg - Gate Charge180 nC
Package / CaseTO-252-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
ImageInfineon / IR IRF4905STRRPBF
Channel ModeEnhancement
SubcategoryMOSFETs
Fall Time64 ns
BrandInfineon / IR
ManufacturerInfineon
Factory Pack Quantity800
Product CategoryMOSFET
Unit Weight0.139332 oz
Product TypeMOSFET
USHTS8541290095
DescriptionMOSFET 1 P-CH -55V HEXFET 20mOhms 120nC
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time99 ns
TypeHEXFET Power MOSFET
Moisture Sensitivity Level1 (Unlimited)