RQ3E130BNTB

厂牌:ROHM Semiconductor
包装:--
类目:元器件 > 分立器件 > MOSFET
编号:B000045007168
描述:MOSFET N-CH 30V 39A 150DEG C 16W; Transistor Polarity:N Channel; Continuous Drain Current Id:39A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0044ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power Dissipation Pd:16W; Transistor Case Style:HSMT; No. of Pins:8Pins; Operating Temperature Max:150蚓; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
最新价格近期成交48单+
数量价格(含税)
1¥6.5495
10¥4.0708
100¥2.6427
500¥2.0190
1000¥1.8139
3000¥1.5594
6000¥1.4363
9000¥1.4035
库存:818交期:起订:1增量:1
数量:
X
6.5495(单价)
合计:
¥6.55
商品满500包邮
商品参数
参数项参数值
参数项参数值
tariffCode85412900
rohsCompliantYES
合规-
hazardousfalse
rohsPhthalatesCompliantYES
针脚数8引脚
isCanonicalN
工作温度最高值150°C
产品范围-
usEccnEAR99
阈值栅源电压最大值2.5V
漏源电压, Vds30V
euEccnNLR
通道类型N通道
晶体管封装类型HSMT
功率耗散16W
productTraceabilityNo
电流, Id 连续39A
Rds(on)测试电压10V
湿气敏感性等级MSL 1 -无限制
晶体管安装表面安装
漏源接通状态电阻6000µohm
SVHCNo SVHC (25-Jun-2025)
Moisture Sensitivity Level1 (Unlimited)