参数项参数值
参数项参数值
DC Current Gain hFE Max800 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
ConfigurationDual
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max45 V
KRHTS8541219000
TechnologySi
Transistor PolarityNPN
Minimum Operating Temperature- 55 C
JPHTS8541210101
Emitter- Base Voltage VEBO6 V
CAHTS8541210000
QualificationAEC-Q101
DescriptionBipolar Transistors - BJT SSP XSTR SC-88 NPN
Collector-Emitter Saturation Voltage250 mV
Package / CaseSOT-363-6
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
Product CategoryBipolar Transistors - BJT
Mounting StyleSMD/SMT
Factory Pack Quantity3000
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
RoHS Details
TARIC8541210000
MXHTS85412101
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000265 oz
CNHTS8541210000
Pd - Power Dissipation380 mW
Moisture Sensitivity Level1 (Unlimited)