参数项参数值
参数项参数值
DC Current Gain hFE Max600
ConfigurationSingle
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 45 V
KRHTS8541219000
Maximum DC Collector Current- 500 mA
Collector- Emitter Voltage VCEO Max- 50 V
Continuous Collector Current- 500 mA
JPHTS8541210101
CAHTS8541210000
ImageON Semiconductor SBC807-40WT1G
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
DescriptionBipolar Transistors - BJT SS GP XSTR PNP 45V
Minimum Operating Temperature- 55 C
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 0.7 V
PackagingCut Tape
PackagingReel
PackagingMouseReel
Package / CaseSC-70-3
DC Collector/Base Gain hfe Min250
Product CategoryBipolar Transistors - BJT
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
Mounting StyleSMD/SMT
Product TypeBJTs - Bipolar Transistors
BrandON Semiconductor
MXHTS85412101
ManufacturerON Semiconductor
RoHS Details
TARIC8541210000
SeriesBC807-40W
SubcategoryTransistors
USHTS8541210095
Unit Weight0.000219 oz
CNHTS8541210000
Pd - Power Dissipation460 mW
Moisture Sensitivity Level1 (Unlimited)