参数项参数值
参数项参数值
Forward Transconductance - Min2.4 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage850 mV
TechnologySi
Id - Continuous Drain Current1.5 A
Transistor PolarityN-Channel
MXHTS85412101
Vgs - Gate-Source Voltage- 12 V, + 12 V
Typical Turn-On Delay Time3.3 ns
Length1 mm
Width0.64 mm
Height0.35 mm
KRHTS8541299000
Rds On - Drain-Source Resistance230 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time10.6 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
CNHTS8541210000
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Qg - Gate Charge1.01 nC
Factory Pack Quantity250
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageTexas Instruments CSD17483F4T
Product TypeMOSFET
BrandTexas Instruments
TARIC8541210000
DescriptionMOSFET 30V,N-Ch FemtoFET MOSFET
RoHS Details
Product CategoryMOSFET
SeriesCSD17483F4
ManufacturerTexas Instruments
SubcategoryMOSFETs
Channel ModeEnhancement
Fall Time3.4 ns
Unit Weight0.000014 oz
USHTS8541290095
Pd - Power Dissipation500 mW
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time1.3 ns
Moisture Sensitivity Level1 (Unlimited)