参数项参数值
参数项参数值
DC Current Gain hFE Max220 at 1 mA, 2 V
Gain Bandwidth Product fT150 MHz
Collector- Base Voltage VCBO- 20 V
Maximum DC Collector Current- 2 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 2 A
ConfigurationSingle
Width1.2 mm
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 5 V
Height0.6 mm
MXHTS85412101
Length1.6 mm
CNHTS8541210000
Collector-Emitter Saturation Voltage- 80 mV
KRHTS8541219000
DC Collector/Base Gain hfe Min220
Minimum Operating Temperature- 55 C
JPHTS8541210101
CAHTS8541210000
Mounting StyleSMD/SMT
PackagingCut Tape
PackagingMouseReel
PackagingReel
Package / CaseSOT-563-6
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS5220V-7
Factory Pack Quantity3000
SeriesDSS52
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT LOW VCE(SAT) PNP SMT
USHTS8541210095
Unit Weight0.000106 oz
Pd - Power Dissipation600 mW