参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO- 20 V
Maximum DC Collector Current- 3 A
Collector- Emitter Voltage VCEO Max- 20 V
Continuous Collector Current- 2 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO- 7 V
MXHTS85412999
CNHTS8541290000
Collector-Emitter Saturation Voltage- 225 mV
KRHTS8541299000
DC Collector/Base Gain hfe Min150
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
PackagingMouseReel
PackagingCut Tape
PackagingReel
Package / CaseSOT-23-3
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541210000
RoHS Details
SubcategoryTransistors
ImageDiodes Incorporated DSS5220T-13
Factory Pack Quantity10000
SeriesDSS5220
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
DescriptionBipolar Transistors - BJT 20V PNP Low Sat Transistor
USHTS8541290075
Unit Weight0.000282 oz
Pd - Power Dissipation1.2 W