参数项参数值
参数项参数值
Maximum DC Collector Current0.2 A
Collector- Emitter Voltage VCEO Max40 V
Continuous Collector Current0.2 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN, PNP
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage- 0.4 V, 0.3 V
DC Collector/Base Gain hfe Min40
Width1.25 mm
Height0.9 mm
Length2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000988 oz
SeriesMBT3946DW1T1
BrandON Semiconductor
ImageON Semiconductor MBT3946DW1T2G
ManufacturerON Semiconductor
Pd - Power Dissipation150 mW
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 200mA 40V Dual Complementary