参数项参数值
参数项参数值
Forward Transconductance - Min0.25 S
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current250 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time3.5 ns
Rds On - Drain-Source Resistance1.7 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time18 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RSU002N06T106
PackagingMouseReel
PackagingCut Tape
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time28 ns
Factory Pack Quantity3000
SeriesRSU002N06
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.000176 oz
ManufacturerROHM Semiconductor
DescriptionMOSFET Trans MOSFET N-CH 60V 0.25A
Product TypeMOSFET
USHTS8541290095
Part # AliasesRSU002N06
Pd - Power Dissipation200 mW
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time5 ns