参数项参数值
参数项参数值
Forward Transconductance - Min0.12 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current280 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.2 ns
Rds On - Drain-Source Resistance2.1 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.7 ns
Width1.25 mm
Height0.9 mm
Length2 mm
MXHTS85412999
Qg - Gate Charge1 nC
KRHTS8541299000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
CAHTS8541290000
Fall Time8.2 ns
ProductMOSFET Small Signal
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation500 mW
ImageInfineon Technologies BSS138W H6327
BrandInfineon Technologies
Factory Pack Quantity3000
Product TypeMOSFET
Product CategoryMOSFET
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time3 ns
USHTS8541290095
DescriptionMOSFET N-Ch SOT-323-3