参数项参数值
参数项参数值
Forward Transconductance - Min60 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.1 V
TechnologySi
Id - Continuous Drain Current100 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time5.8 ns
Rds On - Drain-Source Resistance7.8 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time29 ns
Height1.1 mm
Width1.3 mm
Length2.9 mm
MXHTS85412999
Qg - Gate Charge2.3 nC
KRHTS8541219000
Package / CasePG-SOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Channel ModeDepletion
Minimum Operating Temperature- 55 C
CAHTS8541290000
CNHTS8541210000
Fall Time182 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Unit Weight0.001199 oz
Pd - Power Dissipation360 mW
BrandInfineon Technologies
Part # AliasesBSS139 H6327 SP000702610
ImageInfineon Technologies BSS139H6327XTSA1
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage250 V
Product CategoryMOSFET
USHTS8541210095
Number of Channels1 Channel
Rise Time5.4 ns
DescriptionMOSFET N-Ch 250V 30mA SOT-23-3
Moisture Sensitivity Level1 (Unlimited)