参数项参数值
参数项参数值
DC Current Gain hFE Max160 at 150 mA, 2 V
Gain Bandwidth Product fT130 MHz
Collector- Base Voltage VCBO100 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max80 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage500 mV
DC Collector/Base Gain hfe Min63 at 150 mA, 2 V
MXHTS85412101
KRHTS8541299000
Package / CaseSOT-223-4
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
BrandON Semiconductor
CNHTS8541210000
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - BJT
TARIC8541210000
Product TypeBJTs - Bipolar Transistors
RoHS Details
Factory Pack Quantity4000
ImageON Semiconductor NSVBCP56-10T3G
DescriptionBipolar Transistors - BJT SS SOT223 GP XSTR NPN 80V
SubcategoryTransistors
Unit Weight0.003880 oz
USHTS8541290075
Pd - Power Dissipation1.5 W
Moisture Sensitivity Level1 (Unlimited)