参数项参数值
参数项参数值
Gain Bandwidth Product fT300 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage600 mV
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Width1.35 mm
Height1 mm
Length2.2 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-323-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 65 C
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000176 oz
RoHS Details
Pd - Power Dissipation200 mW
SeriesBC847C
ImageDiodes Incorporated BC847CW-7-F
BrandDiodes Incorporated
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
ManufacturerDiodes Incorporated
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT BIPOLAR TRANSISTOR NPN SOT-323
Moisture Sensitivity Level1 (Unlimited)