参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
MXHTS85412101
Collector-Emitter Saturation Voltage0.6 V
Width1.24 mm
DC Collector/Base Gain hfe Min270
Height0.85 mm
Length2.1 mm
KRHTS8541219000
Package / CaseSC-70-3
CNHTS8541210000
JPHTS8541210101
Mounting StyleSMD/SMT
CAHTS8541210000
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
ImageON Semiconductor BC847CWT1G
TARIC8541210000
RoHS Details
Factory Pack Quantity3000
SeriesBC847CW
ManufacturerON Semiconductor
Unit Weight0.000988 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation150 mW
SubcategoryTransistors
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)