参数项参数值
参数项参数值
Forward Transconductance - Min100 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current230 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time2.3 ns
Rds On - Drain-Source Resistance2.2 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time6.7 ns
Height1.1 mm
Width1.3 mm
Length2.9 mm
Qg - Gate Charge1 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
Minimum Operating Temperature- 55 C
Fall Time8.2 ns
ProductMOSFET Small Signal
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
Pd - Power Dissipation360 mW
SeriesBSS138
BrandInfineon Technologies
Part # AliasesBSS138NH6327XT SP000919330 BSS138NH6327XTSA2
ImageInfineon Technologies BSS138N H6327
ManufacturerInfineon
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage60 V
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time3 ns
DescriptionMOSFET N-Ch 60V 230mA SOT-23-3