参数项参数值
参数项参数值
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min200 at 2 mA, 5 V
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingReel
PackagingCut Tape
PackagingMouseReel
RoHS Details
BrandON Semiconductor
Unit Weight0.000283 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity10000
ManufacturerON Semiconductor
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
Pd - Power Dissipation300 mW
DescriptionBipolar Transistors - BJT SS GP XSTR SPCL TR
Moisture Sensitivity Level1 (Unlimited)