IPB072N15N3 G

IPB072N15N3 G

厂牌：Infineon Technologies

包装：REEL 1

类目：元器件 > 分立器件 > MOSFET

编号：B000045201436

描述：MOSFET N-CH 150V 100A TO263-3

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商品参数

参数项参数值

参数项参数值

Forward Transconductance - Min65 S

ConfigurationSingle

Vgs th - Gate-Source Threshold Voltage2 V

TechnologySi

Id - Continuous Drain Current100 A

Transistor PolarityN-Channel

Vgs - Gate-Source Voltage- 20 V, + 20 V

Typical Turn-On Delay Time25 ns

Rds On - Drain-Source Resistance7.2 mOhms

Transistor Type1 N-Channel

Typical Turn-Off Delay Time46 ns

Width9.25 mm

Height4.4 mm

Length10 mm

MXHTS85412999

KRHTS8541299000

Qg - Gate Charge70 nC

Package / CaseTO-263-3

Mounting StyleSMD/SMT

JPHTS8541290100

CAHTS8541290000

Minimum Operating Temperature- 55 C

Maximum Operating Temperature+ 175 C

Channel ModeEnhancement

CNHTS8541290000

Fall Time14 ns

PackagingCut Tape

PackagingMouseReel

PackagingReel

TARIC8541290000

ImageInfineon Technologies IPB072N15N3 G

RoHS Details

Unit Weight0.139332 oz

SeriesOptiMOS 3

Factory Pack Quantity1000

Product TypeMOSFET

Pd - Power Dissipation300 W

BrandInfineon Technologies

Part # AliasesIPB72N15N3GXT SP000386664 IPB072N15N3GATMA1

SubcategoryMOSFETs

Product CategoryMOSFET

DescriptionMOSFET N-Ch 150V 100A D2PAK-2 OptiMOS 3

ManufacturerInfineon

Vds - Drain-Source Breakdown Voltage150 V

TradenameOptiMOS

USHTS8541290095

Number of Channels1 Channel

Rise Time35 ns