参数项参数值
参数项参数值
DC Current Gain hFE Max300 at 100 mA, 2 V
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current- 1.5 A
Collector- Emitter Voltage VCEO Max- 30 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Height1 mm
Emitter- Base Voltage VEBO- 5 V
Length3 mm
QualificationAEC-Q101
ManufacturerNexperia
Factory Pack Quantity3000
BrandNexperia
KRHTS8541219000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Package / CaseSOT-23-3
TARIC8541210000
DC Collector/Base Gain hfe Min300
CAHTS8541210000
SubcategoryTransistors
Product TypeBJTs - Bipolar Transistors
Width1.4 mm
RoHS Details
Mounting StyleSMD/SMT
ImageNexperia PBSS5130T,215
DescriptionBipolar Transistors - BJT TRANS BISS TAPE-7
MXHTS85412101
Product CategoryBipolar Transistors - BJT
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541210000
Part # Aliases934057988215
Pd - Power Dissipation300 mW
Moisture Sensitivity Level1 (Unlimited)