参数项参数值
参数项参数值
Gain Bandwidth Product fT115 MHz
Collector- Base Voltage VCBO- 200 V
Maximum DC Collector Current- 1 A
Collector- Emitter Voltage VCEO Max- 150 V
Continuous Collector Current- 1 A
ConfigurationSingle
TechnologySi
Emitter- Base Voltage VEBO- 6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage- 60 mV
Width1.4 mm
MXHTS85412101
DC Collector/Base Gain hfe Min100
Height1 mm
Length3 mm
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
BrandNexperia
Unit Weight0.035274 oz
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
SubcategoryTransistors
ManufacturerNexperia
Pd - Power Dissipation300 mW
Part # Aliases934061417215
DescriptionBipolar Transistors - BJT TRANS HV BISS TAPE-7
USHTS8541210075