参数项参数值
参数项参数值
Forward Transconductance - Min410 mS
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.4 V
TechnologySi
Id - Continuous Drain Current190 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Typical Turn-On Delay Time2.3 ns
Rds On - Drain-Source Resistance2.4 Ohms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time7.4 ns
Width1.3 mm
MXHTS85412999
Height1.1 mm
Length2.9 mm
KRHTS8541299000
CNHTS8541290000
Qg - Gate Charge0.6 nC
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 55 C
Channel ModeEnhancement
Fall Time22 ns
TARIC8541290000
PackagingCut Tape
PackagingMouseReel
PackagingReel
BrandInfineon Technologies
RoHS Details
ImageInfineon Technologies BSS123NH6327XT
Product CategoryMOSFET
Unit Weight0.000282 oz
ManufacturerInfineon
SubcategoryMOSFETs
Factory Pack Quantity3000
Product TypeMOSFET
Pd - Power Dissipation500 mW
Part # AliasesSP000870646 BSS123N H6327 BSS123NH6327XTSA1
USHTS8541290095
DescriptionMOSFET N-Ch 100V 190mA SOT-23-3
Vds - Drain-Source Breakdown Voltage100 V
Number of Channels1 Channel
Rise Time3.2 ns