参数项参数值
参数项参数值
tariffCode85412900
Power Dissipation P Channel2W
rohsCompliantYES
Transistor PolarityComplementary N and P Channel
Power Dissipation N Channel2W
hazardousfalse
rohsPhthalatesCompliantYES
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1V
No. of Pins8Pins
usEccnEAR99
Drain Source On State Resistance P Channel0.043ohm
Automotive Qualification Standard-
Drain Source Voltage Vds55V
MSL-
Drain Source On State Resistance N Channel0.043ohm
Product Range-
euEccnNLR
Channel TypeComplementary N and P Channel
Qualification-
On Resistance Rds(on)0.043ohm
Power Dissipation Pd2W
productTraceabilityNo
Drain Source Voltage Vds P Channel55V
Continuous Drain Current Id N Channel4.7A
Continuous Drain Current Id4.7A
Continuous Drain Current Id P Channel4.7A
Operating Temperature Max150°C
Transistor MountingSurface Mount
Drain Source Voltage Vds N Channel55V
SVHCNo SVHC (17-Jan-2023)
Moisture Sensitivity Level1 (Unlimited)