参数项参数值
参数项参数值
ConfigurationSingle
TechnologySi
Id - Continuous Drain Current32 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time8 ns
Rds On - Drain-Source Resistance27 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time34 ns
Width6.22 mm
Length6.73 mm
MXHTS85412999
Qg - Gate Charge27 nC
KRHTS8541299000
Package / CaseTO-252-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541290100
Minimum Operating Temperature- 55 C
CNHTS8541210000
CAHTS8541290000
Channel ModeEnhancement
Fall Time14 ns
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
BrandON Semiconductor / Fairchild
Unit Weight0.009184 oz
RoHS Details
SeriesFDD4685
Factory Pack Quantity2500
ImageON Semiconductor / Fairchild FDD4685
Pd - Power Dissipation69 W
Product CategoryMOSFET
ManufacturerON Semiconductor
SubcategoryMOSFETs
Product TypeMOSFET
USHTS8541290095
Vds - Drain-Source Breakdown Voltage40 V
DescriptionMOSFET -40V P-Channel PowerTrench MOSFET
TradenamePowerTrench
Number of Channels1 Channel
Rise Time15 ns
Moisture Sensitivity Level1 (Unlimited)