参数项参数值
参数项参数值
ConfigurationSingle
Forward Transconductance - Min5.2 S
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current30 A
KRHTS8541299000
Vgs - Gate-Source Voltage- 20 V, + 20 V
JPHTS8541290100
Height2.3 mm
CAHTS8541290000
Length6.5 mm
Minimum Operating Temperature- 55 C
Product CategoryMOSFET
Typical Turn-On Delay Time13 ns
ImageInfineon Technologies SPD30P06PGBTMA1
Rds On - Drain-Source Resistance69 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time30 ns
Maximum Operating Temperature+ 175 C
Package / CaseTO-252-3
PackagingReel
PackagingMouseReel
PackagingCut Tape
DescriptionMOSFET P-Ch -60V -30A DPAK-2
Width6.22 mm
Mounting StyleSMD/SMT
TARIC8541290000
BrandInfineon Technologies
Factory Pack Quantity2500
Qg - Gate Charge48 nC
Product TypeMOSFET
MXHTS85412999
ManufacturerInfineon
RoHS Details
SeriesXPD30P06
SubcategoryMOSFETs
USHTS8541290095
Channel ModeEnhancement
Fall Time20 ns
Unit Weight0.139332 oz
CNHTS8541290000
Part # AliasesSPD30P06P G SP000441776
Pd - Power Dissipation125 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Rise Time11 ns
Moisture Sensitivity Level1 (Unlimited)