参数项参数值
参数项参数值
DC Current Gain hFE Max420 at 2 mA, 5 V
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO30 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max30 V
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
DC Collector/Base Gain hfe Min420 at 2 mA, 5 V
Width1.4 mm
Height1 mm
Length3 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000882 oz
RoHS Details
Pd - Power Dissipation250 mW
ImageNexperia BC849C,215
Part # Aliases933589670215
BrandNexperia
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
ManufacturerNexperia
SubcategoryTransistors
USHTS8541210075
DescriptionBipolar Transistors - BJT TRANS LOW NOISE TAPE-7
Moisture Sensitivity Level1 (Unlimited)