参数项参数值
参数项参数值
Gain Bandwidth Product fT155 MHz
Collector- Base Voltage VCBO125 V
Maximum DC Collector Current1 A
Collector- Emitter Voltage VCEO Max125 V
Continuous Collector Current1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage165 mV
Width1.3 mm
Height1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541219000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingMouseReel
PackagingReel
PackagingCut Tape
Maximum Operating Temperature+ 150 C
Factory Pack Quantity3000
CNHTS8541210000
BrandDiodes Incorporated
DescriptionBipolar Transistors - BJT NPN SuperSOT
ImageDiodes Incorporated FMMT624TA
Product TypeBJTs - Bipolar Transistors
SeriesFMMT62
ManufacturerDiodes Incorporated
TARIC8541210000
Product CategoryBipolar Transistors - BJT
RoHS Details
Unit Weight0.000282 oz
SubcategoryTransistors
Pd - Power Dissipation625 mW
USHTS8541210075
Moisture Sensitivity Level1 (Unlimited)