参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max1600 V
Continuous Collector Current9 A
ConfigurationSingle
TechnologySi
Maximum Gate Emitter Voltage20 V
Collector-Emitter Saturation Voltage4.9 V
Width5.3 mm
Height21.46 mm
Length16.26 mm
Package / CaseTO-247AD-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingTube
RoHS Details
SeriesIXBH9N160
BrandIXYS
ImageIXYS IXBH9N160G
Unit Weight0.229281 oz
Product TypeIGBT Transistors
Factory Pack Quantity30
Product CategoryIGBT Transistors
SubcategoryIGBTs
ManufacturerIXYS
Continuous Collector Current Ic Max9 A
DescriptionIGBT Transistors 9 Amps 1600V
TradenameBIMOSFET