参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage3 V
TechnologySi
Id - Continuous Drain Current80 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
QualificationAEC-Q101
Width4.5 mm
Rds On - Drain-Source Resistance7.4 mOhms
Transistor Type1 N-Channel
Height9.45 mm
Length10.2 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge56 nC
Mounting StyleThrough Hole
Package / CaseTO-262-3
JPHTS8541290100
CAHTS8541290000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Factory Pack Quantity500
CNHTS8541290000
BrandInfineon Technologies
SeriesIPI80N06
Channel ModeEnhancement
Product CategoryMOSFET
TARIC8541290000
ManufacturerInfineon
DescriptionMOSFET MOSFET
ImageInfineon Technologies IPI80N06S407AKSA2
RoHS Details
Product TypeMOSFET
SubcategoryMOSFETs
Unit Weight0.084199 oz
Part # AliasesIPI80N06S4-07 SP001028676
USHTS8541290095
Pd - Power Dissipation79 W
Vds - Drain-Source Breakdown Voltage60 V
Number of Channels1 Channel
Moisture Sensitivity Level1 (Unlimited)