参数项参数值
参数项参数值
Forward Transconductance - Min26 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Transistor PolarityN-Channel
Id - Continuous Drain Current56 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance27 mOhms
Typical Turn-Off Delay Time64 ns
Qg - Gate Charge56 nC
Mounting StyleThrough Hole
Package / CaseTO-220-3
Minimum Operating Temperature- 55 C
PackagingTube
Maximum Operating Temperature+ 150 C
Factory Pack Quantity50
DescriptionMOSFET MSFT N-CH ULTRA JNCT X3 3&44
BrandIXYS
Channel ModeEnhancement
ImageIXYS IXFP56N30X3M
Product TypeMOSFET
ManufacturerIXYS
Fall Time10 ns
Product CategoryMOSFET
RoHS Details
Unit Weight0.088185 oz
SubcategoryMOSFETs
Pd - Power Dissipation36 W
TradenameHiPerFET
Vds - Drain-Source Breakdown Voltage300 V
Number of Channels1 Channel
Rise Time26 ns
Moisture Sensitivity Level1 (Unlimited)