参数项参数值
参数项参数值
Gain Bandwidth Product fT5 MHz
Collector- Base Voltage VCBO90 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max80 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage3.5 V
MXHTS85412999
DC Collector/Base Gain hfe Min20
Width4.83 mm
Height15.75 mm
Length10.53 mm
KRHTS8541299000
CNHTS8541290000
Package / CaseTO-220-3
Mounting StyleThrough Hole
JPHTS8541290100
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 65 C
PackagingTube
TARIC8541290000
Series2N6491
BrandON Semiconductor
RoHS Details
ImageON Semiconductor 2N6491G
Product CategoryBipolar Transistors - BJT
Unit Weight0.211644 oz
Factory Pack Quantity50
SubcategoryTransistors
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Pd - Power Dissipation75 W
USHTS8541290095
DescriptionBipolar Transistors - BJT 15A 80V 75W PNP
Moisture Sensitivity LevelNot Applicable