参数项参数值
参数项参数值
Forward Transconductance - Min26 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage2.5 V
TechnologySi
Id - Continuous Drain Current56 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time21 ns
Rds On - Drain-Source Resistance27 mOhms
Typical Turn-Off Delay Time64 ns
Qg - Gate Charge56 nC
Package / CaseTO-220-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
TARIC8541290000
PackagingTube
RoHS Details
ImageIXYS IXFP56N30X3
Channel ModeEnhancement
SeriesHiPerFET
SubcategoryMOSFETs
Fall Time10 ns
BrandIXYS
Factory Pack Quantity50
Unit Weight0.105822 oz
Product CategoryMOSFET
Product TypeMOSFET
ManufacturerIXYS
DescriptionMOSFET MSFT N-CH ULTRA JNCT X3 3&44
USHTS8541290095
Pd - Power Dissipation320 W
Vds - Drain-Source Breakdown Voltage300 V
TradenameHiPerFET
Number of Channels1 Channel
Rise Time26 ns
Moisture Sensitivity Level1 (Unlimited)