参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT250 MHz
ConfigurationSingle
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
TechnologySi
Minimum Operating Temperature- 65 C
KRHTS8541219000
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
JPHTS8541210101
CAHTS8541210000
Length2.9 mm
Height1 mm
ImageInfineon Technologies BC847CE6327HTSA1
Collector-Emitter Saturation Voltage200 mV
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT AF TRANS GP BJT NPN 45V 0.1A
Maximum Operating Temperature+ 150 C
Package / CaseSOT-23-3
DC Collector/Base Gain hfe Min420
PackagingCut Tape
PackagingMouseReel
PackagingReel
Factory Pack Quantity3000
Width1.3 mm
Mounting StyleSMD/SMT
RoHS Details
TARIC8541210000
BrandInfineon Technologies
ManufacturerInfineon
MXHTS85412101
Product TypeBJTs - Bipolar Transistors
SeriesBC847
SubcategoryTransistors
USHTS8541210075
Unit Weight0.000282 oz
CNHTS8541210000
Part # AliasesBC 847C E6327 SP000010565
Pd - Power Dissipation330 mW
Moisture Sensitivity Level1 (Unlimited)