参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT200 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min420
Width1.3 mm
Height0.95 mm
Length2.9 mm
Package / CaseSST-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
RoHS Details
Unit Weight0.001058 oz
Pd - Power Dissipation350 mW
BrandROHM Semiconductor
ImageROHM Semiconductor BC847CT116
ManufacturerROHM Semiconductor
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity3000
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT NPN 45V 1MA
Moisture Sensitivity Level1 (Unlimited)