参数项参数值
参数项参数值
DC Current Gain hFE Max800
Gain Bandwidth Product fT250 MHz
Collector- Base Voltage VCBO50 V
Maximum DC Collector Current200 mA
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current100 mA
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage200 mV
DC Collector/Base Gain hfe Min420
Width1.3 mm
Height1 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 65 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
Unit Weight0.000282 oz
Pd - Power Dissipation330 mW
SeriesBC 847C
BrandInfineon Technologies
Part # AliasesSP000010590 BC847CE6433XT BC847CE6433HTMA1
ImageInfineon Technologies BC 847C E6433
ManufacturerInfineon
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Factory Pack Quantity10000
Product CategoryBipolar Transistors - BJT
USHTS8541210075
DescriptionBipolar Transistors - BJT NPN Silicon AF TRANSISTOR