参数项参数值
参数项参数值
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO45 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max45 V
Continuous Collector Current0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min420
Width1.2 mm
Height0.55 mm
Length1.6 mm
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-563-6
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000106 oz
RoHS Details
Pd - Power Dissipation500 mW
SeriesBC847CDXV6
ImageON Semiconductor BC847CDXV6T1G
BrandON Semiconductor
Factory Pack Quantity4000
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
ManufacturerON Semiconductor
SubcategoryTransistors
USHTS8541210095
DescriptionBipolar Transistors - BJT 100mA 50V Dual NPN
Moisture Sensitivity Level1 (Unlimited)