参数项参数值
参数项参数值
DC Current Gain hFE Max30
Peak DC Collector Current100 mA
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current100 mA
ConfigurationSingle
Transistor PolarityNPN
Emitter- Base Voltage VEBO50 V
DC Collector/Base Gain hfe Min30
Width1.3 mm
Height1 mm
Length2.9 mm
MXHTS85412101
KRHTS8541219000
Maximum Operating Frequency130 MHz
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541210101
Maximum Operating Temperature+ 150 C
CAHTS8541210000
CNHTS8541210000
PackagingReel
PackagingMouseReel
PackagingCut Tape
TARIC8541210000
Unit Weight0.000282 oz
Pd - Power Dissipation200 mW
RoHS Details
ImageInfineon Technologies BCR 133 E6433
SeriesBCR133
Part # AliasesSP000010759 BCR133E6433XT BCR133E6433HTMA1
BrandInfineon Technologies
Typical Resistor Ratio1
Typical Input Resistor10 kOhms
Factory Pack Quantity10000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
ManufacturerInfineon
USHTS8541210075
DescriptionBipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR