参数项参数值
参数项参数值
Forward Transconductance - Min3.6 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage4 V
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current13 A
Vgs - Gate-Source Voltage- 20 V, + 20 V
KRHTS8541299000
QualificationAEC-Q101
Length6.5 mm
Height2.3 mm
JPHTS8541290100
Typical Turn-On Delay Time14 ns
Minimum Operating Temperature- 55 C
CAHTS8541290000
Rds On - Drain-Source Resistance580 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time53 ns
Package / CaseTO-252-3
RoHS Details
ImageInfineon / IR AUIRFR6215TRL
Factory Pack Quantity3000
PackagingCut Tape
PackagingMouseReel
PackagingReel
Maximum Operating Temperature+ 175 C
Width6.22 mm
TARIC8541290000
SubcategoryMOSFETs
Mounting StyleSMD/SMT
BrandInfineon / IR
ManufacturerInfineon
Product CategoryMOSFET
Qg - Gate Charge66 nC
MXHTS85412999
Product TypeMOSFET
USHTS8541290095
Channel ModeEnhancement
Unit Weight0.070548 oz
Fall Time37 ns
CNHTS8541290000
Pd - Power Dissipation110 W
Vds - Drain-Source Breakdown Voltage150 V
Number of Channels1 Channel
Rise Time36 ns
Moisture Sensitivity Level1 (Unlimited)