参数项参数值
参数项参数值
DC Current Gain hFE Max450
Gain Bandwidth Product fT100 MHz
Collector- Base Voltage VCBO80 V
Maximum DC Collector Current0.1 A
Collector- Emitter Voltage VCEO Max65 V
Continuous Collector Current0.1 A
ConfigurationDual
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO6 V
QualificationAEC-Q101
Collector-Emitter Saturation Voltage0.6 V
DC Collector/Base Gain hfe Min200
MXHTS85412101
KRHTS8541219000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
Maximum Operating Temperature+ 150 C
JPHTS8541210101
Minimum Operating Temperature- 55 C
CAHTS8541210000
CNHTS8541210000
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
Unit Weight0.000265 oz
Pd - Power Dissipation380 mW
BrandON Semiconductor
ImageON Semiconductor SBC846BDW1T1G
ManufacturerON Semiconductor
Product TypeBJTs - Bipolar Transistors
Factory Pack Quantity3000
SubcategoryTransistors
Product CategoryBipolar Transistors - BJT
USHTS8541210095
DescriptionBipolar Transistors - BJT SS DUAL NP XSTR GP
Moisture Sensitivity Level1 (Unlimited)