参数项参数值
参数项参数值
Forward Transconductance - Min600 ms
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1.2 V
TechnologySi
Id - Continuous Drain Current540 mA
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time9 ns
Width1.3 mm
Rds On - Drain-Source Resistance346 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time21 ns
Height1.1 mm
Length2.9 mm
MXHTS85412999
KRHTS8541299000
Qg - Gate Charge1.7 nC
Package / CaseSOT-23-3
JPHTS8541290100
Mounting StyleSMD/SMT
CAHTS8541290000
Minimum Operating Temperature- 55 C
PackagingCut Tape
PackagingReel
Maximum Operating Temperature+ 150 C
Factory Pack Quantity10000
CNHTS8541290000
DescriptionMOSFET SMALL SIGNAL MOSFETS
BrandInfineon Technologies
ImageInfineon Technologies BSS670S2LH6433XTMA1
Channel ModeEnhancement
Product TypeMOSFET
TARIC8541290000
Fall Time24 ns
ManufacturerInfineon
Product CategoryMOSFET
Unit Weight0.000282 oz
SubcategoryMOSFETs
Part # AliasesBSS670S2L H6433 SP001341854
Pd - Power Dissipation360 mW
USHTS8541290095
Vds - Drain-Source Breakdown Voltage55 V
Number of Channels1 Channel
Rise Time25 ns
Moisture Sensitivity Level1 (Unlimited)