参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max50 V
Continuous Collector Current0.1 A
ConfigurationDual
Transistor PolarityNPN, PNP
QualificationAEC-Q101
MXHTS85412101
DC Collector/Base Gain hfe Min80
KRHTS8541219000
CNHTS8541210000
Package / CaseSOT-363-6
Mounting StyleSMD/SMT
JPHTS8541210101
CAHTS8541210000
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541210000
RoHS Details
SeriesMUN5313DW1
BrandON Semiconductor
Unit Weight0.000265 oz
Factory Pack Quantity3000
Product TypeBJTs - Bipolar Transistors - Pre-Biased
ManufacturerON Semiconductor
Product CategoryBipolar Transistors - Pre-Biased
SubcategoryTransistors
Pd - Power Dissipation187 mW
DescriptionBipolar Transistors - Pre-Biased SS BR XSTR DUAL 50V
USHTS8541210095
Typical Resistor Ratio1
Typical Input Resistor47 kOhms
Number of Channels2 Channel
Moisture Sensitivity Level1 (Unlimited)