参数项参数值
参数项参数值
Collector- Emitter Voltage VCEO Max100 V
Continuous Collector Current3 A
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
QualificationAEC-Q101
MXHTS85412999
KRHTS8541299000
Package / CaseDPAK-3
CNHTS8541290000
JPHTS8541290100
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
CAHTS8541290000
Minimum Operating Temperature- 65 C
PackagingReel
TARIC8541290000
ImageON Semiconductor NJVMJD31CT4G
RoHS Details
Factory Pack Quantity2500
ManufacturerON Semiconductor
SeriesMJD31
Unit Weight0.009185 oz
BrandON Semiconductor
Product TypeBJTs - Bipolar Transistors
Product CategoryBipolar Transistors - BJT
DescriptionBipolar Transistors - BJT 3.0 A, 100 V NPN Bipolar Power Transistor
SubcategoryTransistors
Pd - Power Dissipation15 W
USHTS8541290095
Moisture Sensitivity Level1 (Unlimited)