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RQ3E100BNTB
厂牌：ROHM
包装：REEL 1
类目：元器件 > 分立器件 > MOSFET
编号：B000045437010
描述：MOSFET 4.5V Drive Nch MOSFET
商品参数
参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage1 V
TechnologySi
Id - Continuous Drain Current13.5 A
Transistor PolarityN-Channel
Vgs - Gate-Source Voltage- 20 V, + 20 V
Typical Turn-On Delay Time10 ns
Rds On - Drain-Source Resistance7.7 mOhms
Transistor Type1 N-Channel
Typical Turn-Off Delay Time44 ns
MXHTS85412999
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Qg - Gate Charge22 nC
Package / CaseHSMT-8
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
CNHTS8541290000
ImageROHM Semiconductor RQ3E100BNTB
PackagingCut Tape
PackagingMouseReel
PackagingReel
TARIC8541290000
RoHS Details
Channel ModeEnhancement
Fall Time10 ns
Factory Pack Quantity3000
SubcategoryMOSFETs
Product CategoryMOSFET
BrandROHM Semiconductor
Unit Weight0.196723 oz
DescriptionMOSFET 4.5V Drive Nch MOSFET
ManufacturerROHM Semiconductor
Product TypeMOSFET
USHTS8541290095
Part # AliasesRQ3E100BN
Pd - Power Dissipation15 W
Vds - Drain-Source Breakdown Voltage30 V
Number of Channels1 Channel
Rise Time28 ns
Moisture Sensitivity Level1 (Unlimited)