RQ3E100BNTB1

厂牌:ROHM
包装:--
类目:--
编号:B000045437014
描述:MOSFETs HSMT8 N CHAN 30V
最新价格近期成交10单+
数量价格(含税)
1¥2.3137
100¥1.9287
300¥1.5840
500¥1.5184
1000¥1.4691
4000¥1.4273
5000¥1.4273
10000¥1.4191
库存:50交期:21起订:1增量:1
数量:
X
2.3137(单价)
合计:
¥2.31
商品满500包邮
商品参数
参数项参数值
参数项参数值
PackagingTape & Reel (TR)
Package / Case8-PowerVDFN
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C10A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs10.4mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id2.5V @ 1mA
Supplier Device Package8-HSMT (3.2x3)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 15 V
Moisture Sensitivity Level1 (Unlimited)