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商品参数
参数项参数值
参数项参数值
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max2450W (Tc)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C600A (Tc)
Input Capacitance (Ciss) (Max) @ Vds31000pF @ 10V
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id5.6V @ 182mA
Supplier Device PackageModule
Moisture Sensitivity Level1 (Unlimited)