参数项参数值
参数项参数值
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage500 mV
TechnologySi
Id - Continuous Drain Current4.2 A
Transistor PolarityP-Channel
Vgs - Gate-Source Voltage- 8 V, + 8 V
QualificationAEC-Q101
Typical Turn-On Delay Time10.8 ns
Rds On - Drain-Source Resistance52 mOhms
Transistor Type1 P-Channel
Typical Turn-Off Delay Time79.3 ns
MXHTS85412999
Qg - Gate Charge10.2 nC
KRHTS8541299000
Package / CaseSOT-23-3
Mounting StyleSMD/SMT
JPHTS8541290100
Maximum Operating Temperature+ 150 C
Channel ModeEnhancement
CAHTS8541290000
Minimum Operating Temperature- 55 C
Fall Time34.7 ns
CNHTS8541290000
PackagingMouseReel
PackagingReel
PackagingCut Tape
TARIC8541290000
Unit Weight0.000282 oz
RoHS Details
SeriesDMG230
Pd - Power Dissipation1.4 W
BrandDiodes Incorporated
ImageDiodes Incorporated DMG2305UXQ-7
Product TypeMOSFET
Factory Pack Quantity3000
SubcategoryMOSFETs
Vds - Drain-Source Breakdown Voltage20 V
ManufacturerDiodes Incorporated
Product CategoryMOSFET
Number of Channels1 Channel
Rise Time13.7 ns
USHTS8541290095
DescriptionMOSFET MOSFET BVDSS
Moisture Sensitivity Level1 (Unlimited)