参数项参数值
参数项参数值
Forward Transconductance - Min9 S
ConfigurationSingle
Vgs th - Gate-Source Threshold Voltage900 mV
TechnologySi
Transistor PolarityP-Channel
Id - Continuous Drain Current4.2 A
Vgs - Gate-Source Voltage- 8 V, + 8 V
Typical Turn-On Delay Time10.8 ns
MXHTS85412999
CNHTS8541290000
Rds On - Drain-Source Resistance52 mOhms
KRHTS8541299000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time79.3 ns
Minimum Operating Temperature- 55 C
JPHTS8541290100
CAHTS8541290000
Mounting StyleSMD/SMT
Package / CaseSOT-23-3
PackagingCut Tape
PackagingMouseReel
PackagingReel
Qg - Gate Charge10.2 nC
Maximum Operating Temperature+ 150 C
BrandDiodes Incorporated
ManufacturerDiodes Incorporated
TARIC8541290000
RoHS Details
SubcategoryMOSFETs
ImageDiodes Incorporated DMG2305UX-13
Factory Pack Quantity10000
SeriesDMG2305
Product CategoryMOSFET
Product TypeMOSFET
DescriptionMOSFET P-Ch ENH FET -20V 52mOhm -5.0V
Channel ModeEnhancement
Fall Time34.7 ns
USHTS8541290095
Unit Weight0.000282 oz
Pd - Power Dissipation1.4 W
Vds - Drain-Source Breakdown Voltage20 V
Number of Channels1 Channel
Rise Time13.7 ns
Moisture Sensitivity Level1 (Unlimited)