参数项参数值
参数项参数值
DC Current Gain hFE Max75
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO250 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max250 V
Continuous Collector Current15 A
ConfigurationSingle
TechnologySi
Transistor PolarityNPN
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage1 V
Width4.8 mm
Length15.6 mm
Height18.7 mm
DC Collector/Base Gain hfe Min75
Package / CaseTO-3P-3
Mounting StyleThrough Hole
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
PackagingTube
BrandON Semiconductor
ManufacturerON Semiconductor
Factory Pack Quantity30
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
RoHS Details
ImageON Semiconductor NJW0281G
DescriptionBipolar Transistors - BJT 150W
SubcategoryTransistors
Unit Weight0.238311 oz
Pd - Power Dissipation150 W
Moisture Sensitivity LevelNot Applicable