参数项参数值
参数项参数值
DC Current Gain hFE Max75
Gain Bandwidth Product fT30 MHz
Collector- Base Voltage VCBO250 V
Maximum DC Collector Current15 A
Collector- Emitter Voltage VCEO Max250 V
ConfigurationSingle
TechnologySi
Transistor PolarityPNP
Emitter- Base Voltage VEBO5 V
Width4.8 mm
Collector-Emitter Saturation Voltage1 V
Height18.7 mm
DC Collector/Base Gain hfe Min75
MXHTS85412999
Length15.6 mm
KRHTS8541299000
JPHTS8541290100
CAHTS8541290000
Package / CaseTO-3P-3
Mounting StyleThrough Hole
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
CNHTS8541210000
TARIC8541290000
PackagingTube
ImageON Semiconductor NJW0302G
RoHS Details
SubcategoryTransistors
BrandON Semiconductor
Factory Pack Quantity30
Unit Weight0.238311 oz
Product CategoryBipolar Transistors - BJT
Product TypeBJTs - Bipolar Transistors
ManufacturerON Semiconductor
DescriptionBipolar Transistors - BJT 150W
USHTS8541290075
Pd - Power Dissipation150000 mW
Moisture Sensitivity LevelNot Applicable